A comprehensive review on emerging artificial neuromorphic devices
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
efficiency and ultralow power consumption. In the past few decades, neuromorphic …
ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Metal–oxide RRAM
In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …
Comprehensive model of electron conduction in oxide-based memristive devices
C Funck, S Menzel - ACS Applied electronic materials, 2021 - ACS Publications
Memristive devices are two-terminal devices that can change their resistance state upon
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
application of appropriate voltage stimuli. The resistance can be tuned over a wide …
MoS2 Synapses with Ultra-low Variability and Their Implementation in Boolean Logic
Brain-inspired computing enabled by memristors has gained prominence over the years due
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …
Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
The conduction mechanism of metal oxide resistive switching memory is debated in the
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices
C Walczyk, D Walczyk, T Schroeder… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Back-end-of-line integrated 1*1\mum^2\hboxTiN/HfO_2/\breakTi/TiN MIM memory devices in
a 0.25-μm complementary metal–oxide–semiconductor technology were built to investigate …
a 0.25-μm complementary metal–oxide–semiconductor technology were built to investigate …
Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions
EA Miranda, C Walczyk, C Wenger… - IEEE Electron Device …, 2010 - ieeexplore.ieee.org
A physics-based analytical model for the current-voltage (IV) characteristics corresponding
to the low and high resistive states in electroformed metal-insulator-metal structures with HfO …
to the low and high resistive states in electroformed metal-insulator-metal structures with HfO …
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
LG Wang, X Qian, YQ Cao, ZY Cao, GY Fang… - Nanoscale research …, 2015 - Springer
We have demonstrated a flexible resistive random access memory unit with trilayer structure
by atomic layer deposition (ALD). The device unit is composed of Al 2 O 3/HfO 2/Al 2 O 3 …
by atomic layer deposition (ALD). The device unit is composed of Al 2 O 3/HfO 2/Al 2 O 3 …
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications
We have investigated the bilayer structure of binary oxides such as HfO x and ZrO x for
applications to resistance memory. The ZrO x/HfO x bilayer structure shows a lower reset …
applications to resistance memory. The ZrO x/HfO x bilayer structure shows a lower reset …