We propose a novel photonic device, the polariton polarization rectifier, intended to
transform polariton pulses with arbitrary polarization into linearly polarized pulses with …

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN
light-emitting diodes grown on (1122) semipolar versus (0001) polar planes | Applied Physics …

Using light-emitting diodes (LEDs) for visible light communication has become an alternative
choice of radio source due to channel crowding of the radio-frequency (RF) signal. The …

Influences of the surface treatments of Cu (In, Ga)(Se, S) 2 (CIGSSe) thin films, which are
KCN, HCl, or thiuorea treatments, were investigated by time-resolved photoluminescence …

Simulations of propagation of light beams in specially designed multilayer semiconductor
structures (one-dimensional photonic crystals) with embedded quantum wells reveal …

Utilising our novel wafer-scale electrochemical porosification approach which proceeds
through the top surface by means of nanoscale vertical etching pathways, we have prepared …

Separated evaluation of factors in the external quantum efficiency (EQE) is important in
order to improve the characteristics of semiconductors optical devices. Especially, the …

In this study, we investigate In composition and the carrier density dependences of radiative
and nonradiative recombination lifetimes for a series of c-plane InGaN quantum well (QW) …

In this study, we have separately evaluated the radiative and non-radiative recombination
lifetimes for InGaN quantum well (QW) samples with different amounts of ion-implantation …

We report on the electric field dependent carrier dynamics and optical absorption in
nonpolar a-plane GaN-based quantum heterostructures grown on r-plane sapphire, which …