Since the first report of ferroelectricity in a Si-doped HfO2 film in 2011, HfO2-based materials
have attracted much interest from the ferroelectric materials and devices community …

Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Modern computation based on von Neumann architecture is now a mature cutting-edge
science. In the von Neumann architecture, processing and memory units are implemented …

Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable
polarization states by external electric field in nonvolatile manner. However, complementary …

A novel system-on-a-chip compatible one-transistor one-capacitor ferroelectric random-
access memory array (1T1C FeRAM) based on ferroelectric Hf 0.5 Zr 0.5 O 2 with a …

To reduce system complexity and bridge the interface between electronic and photonic
circuits, there is a high demand for a non-volatile memory that can be accessed both …

Using “capacitive” crossbar arrays for compute-in-memory (CIM) offers higher energy
efficiency compared to “resistive” crossbar arrays. The non-volatile capacitive (nvCap) …