A photodetector (PD) converts optical signals into electrical ones and is widely used in
optical interconnect. High‐speed PDs are in high demand as they are necessary to meet …

In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–
oxide–semiconductor (CMOS) compatibility are attractive for various applications such as …

The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …

Efficient p‐and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx)
semiconductor epilayers, grown by chemical vapor deposition on a standard Si (001) …

Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

This paper mainly discusses the design and optimization of the grating coupler for the 2 µm
band and selects the top layer silicon with a thickness of 0.34 µm according to the …

In this work, the metal-semiconductor-metal photodetectors were demonstrated on the Ge
0.91 Sn 0.09-on-insulator (GeSnOI) platform. The responsivity was 0.24 and 0.06 A/W at …

Improving detection efficiency of Ge photodetector near the absorptance edge is crucial for
fiber-optic telecommunication. Here, we report the unique photodetection properties of …

Plasmonics stems from the surface charge density oscillations at metal–dielectric interface,
leading to extremely strong light–matter interactions. In the past few decades, plasmonics …