Spin transport and relaxation in germanium

K Hamaya, Y Fujita, M Yamada… - Journal of Physics D …, 2018 - iopscience.iop.org
This paper reviews the recent progress in germanium (Ge) spintronics on the basis of the
electrical spin injection from ferromagnets (FM), where Ge is a next generation …

Observation of large unidirectional Rashba magnetoresistance in Ge (111)

T Guillet, C Zucchetti, Q Barbedienne, A Marty… - Physical Review Letters, 2020 - APS
Relating magnetotransport properties to specific spin textures at surfaces or interfaces is an
intense field of research nowadays. Here, we investigate the variation of the electrical …

Spin-charge interconversion in heterostructures based on group-IV semiconductors

F Bottegoni, C Zucchetti, G Isella, M Bollani… - La Rivista del Nuovo …, 2020 - Springer
Spin-charge interconversion phenomena are ubiquitous in solid-state physics and represent
a powerful tool to investigate spin transport in metals, semiconductors and …

Effect of Strain on Room-Temperature Spin Transport in

T Naito, M Yamada, Y Wagatsuma, K Sawano… - Physical Review …, 2022 - APS
We report a strain effect on spin transport in semiconductors that exhibit Ge-like conduction
bands at room temperature. Using four-terminal nonlocal spin-transport measurements in …

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi

K Kudo, M Yamada, S Honda, Y Wagatsuma… - Applied Physics …, 2021 - pubs.aip.org
We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in
semiconductor-based lateral spin-valve devices. From first-principles calculations, we …

Suppression of Donor-Driven Spin Relaxation in Strained

T Naito, M Yamada, S Yamada, K Sawano… - Physical Review Applied, 2020 - APS
We experimentally study the strain effect on electron spin relaxation in a semiconductor
using nonlocal spin-transport measurements in lateral spin-valve devices. Application of in …

Tuning spin-charge interconversion with quantum confinement in ultrathin bismuth films

C Zucchetti, MT Dau, F Bottegoni, C Vergnaud… - Physical Review B, 2018 - APS
Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field
of spintronics as a means to detect spin currents or manipulate the magnetization of …

Helicity dependent photoresistance measurement vs. beam-shift thermal gradient

H Yang, E Schmoranzerová, P Jang, J Nath… - Nature …, 2022 - nature.com
Optical detection techniques are among the most powerful methods used to characterize
spintronic phenomena. The spin orientation can affect the light polarization, which, by the …

Doping dependence of the electron spin diffusion length in germanium

C Zucchetti, M Bollani, G Isella, M Zani, M Finazzi… - APL Materials, 2019 - pubs.aip.org
We have investigated the electron spin diffusion length at room temperature in bulk n-doped
germanium as a function of the doping concentration. To this purpose, we exploit a nonlocal …

Spin orbitronics at a topological insulator-semiconductor interface

T Guillet, C Zucchetti, A Marchionni, A Hallal… - Physical Review B, 2020 - APS
Topological insulators (TIs) hold great promise for new spin-related phenomena and
applications thanks to the spin texture of their surface states. However, a versatile platform …