Electron tunneling through atomically flat and ultrathin hexagonal boron nitride

GH Lee, YJ Yu, C Lee, C Dean, KL Shepard… - Applied physics …, 2011 - pubs.aip.org
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on
gold-coated mica was investigated using conductive atomic force microscopy. Low-bias …

Metal oxide charge transport layers in perovskite solar cells—optimising low temperature processing and improving the interfaces towards low temperature processed …

Y Wang, AB Djurišić, W Chen, F Liu… - Journal of Physics …, 2020 - iopscience.iop.org
In this review, we will discuss recent progress in metal oxide charge transport layers in
perovskite solar cells (PSCs). While a large number of PSCs have at least one metal oxide …

[图书][B] Conductive atomic force microscopy: applications in nanomaterials

M Lanza - 2017 - books.google.com
The first book to summarize the applications of CAFM as the most important method in the
study of electronic properties of materials and devices at the nanoscale. To provide a global …

[HTML][HTML] Sensing current and forces with SPM

JY Park, S Maier, B Hendriksen, M Salmeron - Materials today, 2010 - Elsevier
Atomic force microscopy (AFM) and scanning tunneling microscopy (STM) are well
established techniques to image surfaces and to probe material properties at the atomic and …

Advances in AFM for the electrical characterization of semiconductors

RA Oliver - Reports on Progress in Physics, 2008 - iopscience.iop.org
Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

In situ observation of low‐power nano‐synaptic response in graphene oxide using conductive atomic force microscopy

F Hui, P Liu, SA Hodge, T Carey, C Wen, F Torrisi… - Small, 2021 - Wiley Online Library
Multiple studies have reported the observation of electro‐synaptic response in different
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …

Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries

O Pirrotta, L Larcher, M Lanza, A Padovani… - Journal of Applied …, 2013 - pubs.aip.org
We investigate the role of grains and grain boundaries (GBs) in the electron transport
through poly-crystalline HfO 2 by means of conductive atomic force microscopy (CAFM) …

C-AFM-based thickness determination of thin and ultra-thin SiO2 films by use of different conductive-coated probe tips

W Frammelsberger, G Benstetter, J Kiely… - Applied Surface Science, 2007 - Elsevier
The influence of the probe tip type on the electrical oxide thickness result was researched for
four differently coated conductive tip types using SiO2 (oxide) films with optical thickness of …

[HTML][HTML] Tunneling transport of mono-and few-layers magnetic van der Waals MnPS3

S Lee, KY Choi, S Lee, BH Park, JG Park - APL Materials, 2016 - pubs.aip.org
We have investigated the tunneling transport of mono-and few-layers of MnPS 3 by using
conductive atomic force microscopy. Due to the band alignment of indium tin oxide/MnPS …

Evaluation of the electrical contact area in contact-mode scanning probe microscopy

U Celano, T Hantschel, G Giammaria… - Journal of Applied …, 2015 - pubs.aip.org
The tunneling current through an atomic force microscopy (AFM) tip is used to evaluate the
effective electrical contact area, which exists between tip and sample in contact-AFM …