A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe)
W Miller, A Sabanskis, A Gybin, KP Gradwohl… - Crystals, 2023 - mdpi.com
The evolution of the dislocation density during Czochralski growth is computed by the
combination of global thermal calculations and local computation of the stress and …
combination of global thermal calculations and local computation of the stress and …
Numerical and experimental investigation of the effect of the solid–liquid interface shape on grown-in defects in a silicon single crystal
R Suewaka, T Saishoji… - Japanese Journal of …, 2024 - iopscience.iop.org
The demand for grown-in defect-free wafers for high-performance silicon semiconductor
devices is significantly increasing. To obtain defect-free crystals, the ratio v/G of the growth …
devices is significantly increasing. To obtain defect-free crystals, the ratio v/G of the growth …