Direct WS2 photodetector fabrication on a flexible substrate
Recently, research to find novel two-dimensional (2D)-layered materials has attracted
attention due to their advantages in flexible device applications. Thus, we directly fabricated …
attention due to their advantages in flexible device applications. Thus, we directly fabricated …
Back-end-of-line compatible InSnO/ZnO heterojunction thin-film transistors with high mobility and excellent stability
Q Li, J Dong, D Han, J Wang, D Xu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
We examine low-temperature fabricated InSnO/ZnO (ITO/ZnO) heterojunction thin-film
transistors (TFTs) with high mobility and excellent stability. The effects of ITO thickness (0, 2 …
transistors (TFTs) with high mobility and excellent stability. The effects of ITO thickness (0, 2 …
Zinc oxide incorporated indium tungsten oxide amorphous thin films for thin film transistors applications
RN Chauhan, N Tiwari - Journal of Non-Crystalline Solids, 2021 - Elsevier
Zinc oxide (ZnO), indium tungsten oxide (IWO), and ZnO incorporated indium tungsten oxide
(ZIWO) thin films (thickness~ 10 nm) have been fabricated at room temperature by radio …
(ZIWO) thin films (thickness~ 10 nm) have been fabricated at room temperature by radio …
스퍼터링공정에따른IWZO TFT 제작및특성연구
김태건， 양유진， 이세림， 이승혁 - 대한전자공학회학술대회, 2023 - dbpia.co.kr
현재까지 디스플레이의 Backplane 역할을 하는 비정질 산화물 박막 트랜지스터 (TFT) 는
비정질 실리콘 박막 트랜지스터 (a-Si) 대비 우수한 성능을 보이는 중국의 급격한 매장량 감소와 …
비정질 실리콘 박막 트랜지스터 (a-Si) 대비 우수한 성능을 보이는 중국의 급격한 매장량 감소와 …