Three-dimensionally confined semiconductor quantum dots have emerged to be a versatile
material system with unique physical properties for a wide range of device applications. With …

Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can
absorb photons with energy lower than the bandgap of the semiconductor through the half …

Interfacial engineering of the photoanode has been one of the most important strategies in
designing high-performance quantum dot (QD)-sensitized solar cells (QDSSCs). In this …

Quantum-dot (QD) intermediate-band (IB) materials are regarded as promising candidates
for high-efficiency photovoltaics. The sequential two-step two-photon absorption processes …

For a thorough understanding of graphene/GaAs heterojunction solar cells, the effect of the
graphene work function, absorption loss, density of interface states, as well as the …

InAs/GaAs quantum dot solar cell structures have been grown by metal organic vapor phase
epitaxy, using partial capping of the quantum dots plus a subsequent thermal anneal. The …

Intermediate band solar cells (IBSCs) hold the promise of power conversion efficiency (PCE)
as high as that of the triple junction solar cells but with a simple single semiconductor …

With advancement in photovoltaic technology solar devices matured and the current trend
indulge a requisite to elevate device performance by power conversion efficiency and is the …

Four different data representations were evaluated for the determination of the total
antioxidant activities of four different Prunella L. species, which are Prunella vulgaris …

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is
expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current …