Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Pole-to-pole DC faults on HB-MMC-VSC-HVDC schemes impose significant risk of cascade
failure on IGBT/diode pairs. Other novel topologies with fault blocking capability, ie AAC …

For the first time, a graded etched junction termination extension (JTE) is applied to
completed 4H-SiC gate turn-off thyristors. These devices demonstrate the feasibility of …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

Ultrahigh-voltage 4H-silicon carbide (SiC) gate turn-OFF thyristors (GTOs), with multiple
space-modulated buffer trench (SMBT) regions on the traditional three-step junction …

In this article, an ultrahigh voltage silicon carbide (SiC) gate turn off (GTO) Thyristor with a
novel trench-modulated two-zone junction termination extension (TM-TZ-JTE) is investigated …

There is a growing demand for medium voltage, 6.5-24 kV, switches capable of operating at
more than 15 kHz frequencies. The range of potential applications includes grid-tied solar …

Silicon carbide (SiC) is an attractive material for high-voltage and hightemperature
electronic applications owing to the wide bandgap, high critical electric field, and high …

Silicon Carbide Anode Switched Thyristors (ASTs) overcome major limitations of
conventional Si and SiC IGBT and GTO Thyristor solutions by providing robust, MOS …

In this paper, an original termination, the etched guard ring assisted junction termination
extension (JTE), is demonstrated on 4H–SiC light triggered thyristors. The termination …