There is rapidly expanding interest in exploiting the spin of valence-band holes rather than
conduction-band electrons for spin qubit semiconductor circuits composed of coupled …

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the
gallium-assisted method. The spatial dependence of the dopant concentration and resistivity …

We propose to use residual anyons of the overscreened Kondo effect for topological
quantum computation. A superconducting proximity gap of Δ< TK can be utilized to isolate …

We theoretically investigate the spin dynamics of a heavy hole confined to an unstrained III-
V semiconductor quantum dot and interacting with a narrowed nuclear-spin bath. We show …

We review recent studies on spin decoherence of electrons and holes in quasi-two-
dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots …

Low-temperature transport experiments on ap-type GaAs quantum dot capacitively coupled
to a quantum point contact are presented. The time-averaged as well as time-resolved …

We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs
heterostructure. Our device consists of a p-type quantum dot, populated using an electric …

Atomic force microscopy (AFM) assisted local anodic oxidation (LAO) offers advantages over
other semiconductor fabrication techniques as it is a low contamination method. We …

Quantum point contacts (QPCs) implemented in p-type GaAs/AlGaAs heterostructures are
investigated by low-temperature electrical conductance spectroscopy. Besides one …

Abstract Al x Ga 1− x As-GaAs heterostructures have been prepared in which the charge
density NS can be varied over a wide regime: NS= 1× 10 10 cm− 2 to 5× 10 11 cm− 2. This …