Power electronic systems have a great impact on modern society. Their applications target a
more sustainable future by minimizing the negative impacts of industrialization on the …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Vertical gallium nitride (GaN) pn diodes have garnered significant interest for use in power
electronics where high-voltage blocking and high-power efficiency are of concern. In this …

In this work, we demonstrate a deep mesa etch design for efficient edge field termination in β-
Ga 2 O 3 Schottky barrier diodes (SBDs). The proposed design enabled parallel plate fields …

Semiconductor materials play a crucial role in the development of optoelectronics and
power devices. However, their evaluation and selection pose a multi-attribute decision …

Thick GaN layers with a low concentration of defects are the key to enable next-generation
vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor …

Gallium oxide (Ga2O3) is a highly promising ultrawide‐bandgap semiconductor for power
electronics that emerged about a decade ago. Epitaxial growth Ga2O3 at the small scale is …

This investigation presents a self-powered, solar-blind photodetector utilizing a low-
temperature fabricated crystalline NiO/ZnGa2O4 heterojunction with a staggered type-II …

In this paper, vertical diamond Schottky barrier diode with a beveled junction termination
extension is designed by using Silvaco TCAD. We firstly investigate the effects of the pn …

Semiconductor devices are currently one of the most common energy consumption devices.
Significantly reducing the energy consumption of semiconductor devices with advanced …