Bright room-temperature single photon emission from defects in gallium nitride
Single photon emitters play a central role in many photonic quantum technologies. A
promising class of single photon emitters consists of atomic color centers in wide-bandgap …
promising class of single photon emitters consists of atomic color centers in wide-bandgap …
Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane
epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane …
epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane …
One-step fabrication method of GaN films for internal quantum efficiency enhancement and their ultrafast mechanism investigation
The third-generation semiconductors are the cornerstone of the power semiconductor leap
forward and have attracted much attention because of their excellent properties and wide …
forward and have attracted much attention because of their excellent properties and wide …
Defect reduction in (112¯) a-plane GaN by two-stage epitaxial lateral overgrowth
The authors report a two-stage epitaxial lateral overgrowth (ELO) method to get uniformly
coalesced (11 2 0) a-plane GaN using metal organic chemical vapor deposition by …
coalesced (11 2 0) a-plane GaN using metal organic chemical vapor deposition by …
p‐type conduction in stacking‐fault‐free m ‐plane GaN
M McLaurin, JS Speck - physica status solidi (RRL)–Rapid …, 2007 - Wiley Online Library
Transport measurements of p‐type m‐plane GaN films grown on low extended‐defect
density, free‐standing m‐plane (10 ̄1 0) GaN substrates are presented. No significant …
density, free‐standing m‐plane (10 ̄1 0) GaN substrates are presented. No significant …
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Metastability of near band gap UV emissions in Mg-doped GaN layers grown by metal-
organic vapor phase epitaxy on thick GaN templates grown by halide vapor phase epitaxy …
organic vapor phase epitaxy on thick GaN templates grown by halide vapor phase epitaxy …
Optical properties of functionalized GaN nanowires
CW Hsu, A Ganguly, CP Chen, CC Kuo… - Journal of Applied …, 2011 - pubs.aip.org
The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence
of surface functionalization processes is reported; from pristine hydroxylated to finally, 3 …
of surface functionalization processes is reported; from pristine hydroxylated to finally, 3 …
Epitaxial lateral overgrowth of a-plane GaN by metalorganic chemical vapor deposition
We report on epitaxial lateral overgrowth (ELO) of (11 2 0) a-plane GaN by metalorganic
chemical vapor deposition. Different growth rates of Ga-and N-polar wings together with …
chemical vapor deposition. Different growth rates of Ga-and N-polar wings together with …
Structural and optical properties of nonpolar (1 1− 2 0) a-plane GaN grown on (1− 1 0 2) r-plane sapphire substrate by plasma-assisted molecular beam epitaxy
We report the structural and optical properties of a-plane GaN film grown on r-plane
sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray …
sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray …
Hydrogen-related, deeply bound excitons in Mg-doped GaN films
Luminescence in the near band-edge spectral region of Mg-doped GaN films grown by
metalorganic chemical vapor deposition has been studied at liquid-helium temperatures …
metalorganic chemical vapor deposition has been studied at liquid-helium temperatures …