The evolution of silicon cryoetching is reported in this topical review, from its very first
introduction by a Japanese team to today's advanced technologies. The main advances in …

Organosilicate glass (OSG) films are a critical component in modern electronic devices, with
their electrical properties playing a crucial role in device performance. This comprehensive …

A simple and feasible homogeneous electrochemical sensing protocol was developed for
the detection of ochratoxin A (OTA) in foodstuff on the immobilization-free aptamer …

In this article, we give an overview about the chemical and physical processes that play a
role in etching at lower wafer temperatures. Conventionally, plasma etching processes rely …

This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …

Cryogenic etching of a-Si, SiO 2, and Si 3 N 4 materials by CHF 3/Ar inductively coupled
plasma is investigated in a range of temperature from− 140 to+ 20 C. Samples of the three …

As atomic-scale etching and deposition processes become necessary for manufacturing
logic and memory devices at the sub-5 nm node, the limitations of conventional plasma …

The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

Surfactant-templated porous organosilicate glass low-k films have been deposited by using
a tetraethoxysilane (TEOS) and methyltriethoxysilane (MTEOS) mixture with different ratios …

Low temperature plasma etching of porous organosilicate low-k films is studied, in an ICP
chamber with cryo-cooled substrate holder, using Fluorine-based plasma discharges. It is …