Semiconductor device including fin structures and manufacturing method thereof
YJ Chen, CC Liao, CS Liang, SH Chang… - US Patent …, 2019 - Google Patents
(57) ABSTRACT A method of manufacturing a semiconductor Fin FET includes forming a fin
structure over a substrate. The fin structure includes an upper layer, part of which is exposed …
structure over a substrate. The fin structure includes an upper layer, part of which is exposed …
Spacer for dual epi CMOS devices
SC Seo - US Patent 10,170,478, 2019 - Google Patents
Aspects of the disclosure include a method for making a semiconductor, including patterning
a first transistor having one or more gate stacks on a first source-drain area and second …
a first transistor having one or more gate stacks on a first source-drain area and second …
Method for fabricating a row of MOS transistors
L Gaben - US Patent 10,998,236, 2021 - Google Patents
A strip made of a semiconductor material is formed over a substrate. Longitudinal portions of
the strip having a same length are covered with sacrificial gates made of an insu lating …
the strip having a same length are covered with sacrificial gates made of an insu lating …
Spacer for dual epi CMOS devices
SC Seo - US Patent 11,031,396, 2021 - Google Patents
A method for making a semiconductor includes patterning a first transistor having one or
more gate stacks on first source-drain area and second transistor comprising one or more …
more gate stacks on first source-drain area and second transistor comprising one or more …