Background: The insatiable need for low-power and high-performance integrated circuit (IC)
results in the development of alternative options for metal oxide semiconductor field effect …

The major motivation behind transistor scaling is the requirement for high‐speed transistors
with lower fabrication costs. When the fin thickness or breadth is smaller than 10 nm in a …

In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility
transistors (HEMTs) by optimizing the gate‐drain distance (L GD) and two T‐gate …

Germanium channel FinFET transistors process integration on a silicon substrate is a
promising candidate to extend the complementary metal–oxide–semiconductor …

The scaling of planar Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
technology has reached to its extremity. Double Gate (DG) device was introduced to derive …

The principal design concern in today's very large-scale integration (VLSI) industry is power
dissipation. Power dissipation in a chip rises reliability issues. Static power dissipation …

In this study, an enhancement-mode (E-mode) GaN high electron mobility transistor (HEMT)
with lateral tri-gate structure field effect transistor (FinFET) is proposed. To passivate the fin …

This work studies radiation-induced effects in FinFET technology, the leading technology in
advanced nodes for high-end embedded systems. As the fin height (HFIN) and the number …

为研究Bulk FinFET 工作时基本结构参数, 器件温度和栅极材料对其性能的影响, 建立了一个15
nm n 型Bulk FinFET 器件模型, 仿真分析了不同栅长, 鳍宽, 鳍高, 沟道掺杂浓度, 器件工作温度 …

This article proposes four Triple Gate (TG) FinFET structures with variations in fin height and
fin width with 22 nm gate length on SOI substrate. The four different structures are presented …