Transistor with threshold voltage set notch and method of fabrication thereof
R Arghavani, P Ranade, L Shifren… - US Patent …, 2014 - Google Patents
6,808 004 B2 10/2004 Kamm et a1, 7,398,497 B2 7/2008 Sato et 31. 63083994 B1 10/2004
Wang 7,402,207 B1 7/2008 Besser et a1. 6,813,750 B2 11/2004 Usami et 31 ' 7,402,872 B2 …
Wang 7,402,207 B1 7/2008 Besser et a1. 6,813,750 B2 11/2004 Usami et 31 ' 7,402,872 B2 …
Low power semiconductor transistor structure and method of fabrication thereof
L Shifren, P Ranade, SE Thompson… - US Patent …, 2013 - Google Patents
Deeply Depleted Channel (DDC) design, allowing CMOS based devices to have a reduced
OV, compared to conven tional bulk CMOS and can allow the threshold voltage V of FETs …
OV, compared to conven tional bulk CMOS and can allow the threshold voltage V of FETs …
Advanced transistors with punch through suppression
L Shifren, P Ranade, PE Gregory… - US Patent …, 2013 - Google Patents
An advanced transistor with punch through suppression includes a gate with length Lg, a
well doped to have a? rst concentration of a dopant, and a screening region positioned …
well doped to have a? rst concentration of a dopant, and a screening region positioned …
Bit interleaved low voltage static random access memory (SRAM) and related methods
LT Clark - US Patent 9,070,477, 2015 - Google Patents
5,144,378 5,156,989 5,156,990 5,166,765 5,208.473 5,294,821 5,298.763 5,369,288 5,373,
186 5,384,476 5,426.328 5,444,008 5,552,332 5,559,368 5,608,253 5,622,880 5,624,863 …
186 5,384,476 5,426.328 5,444,008 5,552,332 5,559,368 5,608,253 5,622,880 5,624,863 …
Dynamic random access memory (DRAM) with low variation transistor peripheral circuits
(65) Prior Publication Data(Continued) US 2014/O119099 A1 May 1, 2014 Primary
Examiner—Andrew Q Tran (74) Attorney, Agent, or Firm—Baker Botts LLP Related US …
Examiner—Andrew Q Tran (74) Attorney, Agent, or Firm—Baker Botts LLP Related US …
Process for manufacturing an improved analog transistor
L Shifren, SE Thompson, PE Gregory - US Patent 8,748,270, 2014 - Google Patents
3,958.266 A 5, 1976 Athanas 4,000,504 A 12/1976 Berger 4,021,835 A 5, 1977 Etoh et al.
4,242,691 A 12/1980 Kotani et al. 4,276.095 A 6/1981 Beilstein, Jr. et al. 4,315,781 A 2f1982 …
4,242,691 A 12/1980 Kotani et al. 4,276.095 A 6/1981 Beilstein, Jr. et al. 4,315,781 A 2f1982 …
Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of …
D Zhao, P Ranade, B McWilliams - US Patent 9,093,550, 2015 - Google Patents
(51) Int. Cl(57) ABSTRACT tion 21/8238 (2006.01) Semiconductor manufacturing processes
include forming HOIL 21/82(2006.015 conventional channel field effect transistors (FETs) …
include forming HOIL 21/82(2006.015 conventional channel field effect transistors (FETs) …
Integrated circuit process and bias monitors and related methods
LT Clark, DA Kidd, CW Chen - US Patent 9,112,484, 2015 - Google Patents
4.885. 477 A 12/1989 Bird et al. 6,232,164 B1 5, 2001 Tsai et al. 4,908,681 A 3, 1990
Nishida et al. 6,235,597 B1 5/2001 Miles 4,945,254 A 7, 1990 Robbins 6,245,618 B1 6/2001 …
Nishida et al. 6,235,597 B1 5/2001 Miles 4,945,254 A 7, 1990 Robbins 6,245,618 B1 6/2001 …
Semiconductor devices having fin structures and fabrication methods thereof
T Hoffmann, SE Thompson - US Patent 9,054,219, 2015 - Google Patents
A method of fabricating semiconductor devices includes pro viding a semiconducting
Substrate. The method also includes defining a heavily doped region at a surface of the …
Substrate. The method also includes defining a heavily doped region at a surface of the …
Semiconductor structure and method of fabrication thereof with mixed metal types
L Shifren, P Ranade, SR Sonkusale - US Patent 8,569,128, 2013 - Google Patents
4.945. 254 A 7, 1990 Robbins 6,271,070 B2 8/2001 Kotani et al. 4.956, 311 A 9, 1990 Liou
et al. 6,271,551 B1 8, 2001 Schmitz et al. 5, 034337 A 7, 1991 Mosher et al. 6,288.429 B1 …
et al. 6,271,551 B1 8, 2001 Schmitz et al. 5, 034337 A 7, 1991 Mosher et al. 6,288.429 B1 …