Investigation of self-heating effects in vertically stacked GAA MOSFET with wrap-around contact
A contact resistance () becomes a major parasitic resistance in highly scaled modern
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …
semiconductor devices. A wrap-around contact (WAC) has been suggested as a promising …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
Thermal-aware IC chip design by combining high thermal conductivity materials and GAA MOSFET
The high integration of integrated circuit (IC) chip design has made thermal-aware design as
one of the first priorities of the modern IC chip industry. Even though the modern IC chip …
one of the first priorities of the modern IC chip industry. Even though the modern IC chip …
Drain breakdown in submicron MOSFETs: a review
H Wong - Microelectronics Reliability, 2000 - Elsevier
This paper reviews the physics and models of drain breakdown in short-channel MOSFET.
Four mechanisms, namely,(1) avalanche breakdown (MI mode),(2) finite multiplication with …
Four mechanisms, namely,(1) avalanche breakdown (MI mode),(2) finite multiplication with …
Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
Electrothermal effects on hot-carrier reliability in SOI MOSFETs—AC versus circuit-speed random stress
Computational study of electrothermal effects on hot-carrier injection (HCI) in 100-nm silicon-
on-insulator (SOI) MOSFET for digital integrated circuit is performed using in-house …
on-insulator (SOI) MOSFET for digital integrated circuit is performed using in-house …
Narrow-width SOI devices: The role of quantum-mechanical size quantization effect and unintentional doping on the device operation
D Vasileska, SS Ahmed - IEEE Transactions on Electron …, 2005 - ieeexplore.ieee.org
The ultimate limits in scaling of conventional MOSFET devices have led the researchers
from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon …
from all over the world to look for novel device concepts, such as ultrathin-body (UTB) silicon …
A thermal activation view of low voltage impact ionization in MOSFETs
The authors present a thermal activation perspective for direct assessment of the low voltage
impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally …
impact ionization in deep-submicrometer MOSFETs. A comparison of the experimentally …
Electrothermal effects on hot carrier injection in n-type SOI FinFET under circuit-speed bias
Electrothermal study of the n-type SOI Fin-FETs at 50-nm node is performed by analytical
method and numerical algorithm. The self-heating effects (SHE) are investigated and …
method and numerical algorithm. The self-heating effects (SHE) are investigated and …
Efficient monte carlo device modeling
FM Bufler, A Schenk, W Fichtner - IEEE Transactions on …, 2000 - ieeexplore.ieee.org
A single-particle approach to full-band Monte Carlo device simulation is presented which
allows an efficient computation of drain, substrate and gate currents in deep submicron …
allows an efficient computation of drain, substrate and gate currents in deep submicron …