III–V nanowire transistors for low-power logic applications: a review and outlook
III-V semiconductors, especially InAs, have much higher electron mobilities than Si and have
been considered as promising candidates for n-channel materials for post-Si low-power …
been considered as promising candidates for n-channel materials for post-Si low-power …
The past and future of multi-gate field-effect transistors: Process challenges and reliability issues
Y Sun, X Yu, R Zhang, B Chen… - Journal of …, 2021 - iopscience.iop.org
This work reviews the state-of-the art multi-gate field-effect transistor (MuGFET) process
technologies and compares the device performance and reliability characteristics of the …
technologies and compares the device performance and reliability characteristics of the …
High electron mobility in strained GaAs nanowires
Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …
energy consumption and better integrability in various platforms in nanoscale dimensions …
InGaAs gate-all-around nanowire devices on 300mm Si substrates
N Waldron, C Merckling, L Teugels… - IEEE Electron …, 2014 - ieeexplore.ieee.org
In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …
on 300mm Si substrates. For an LG of 60 nm an extrinsic gm of 1030 μS/μm at V ds= 0.5 V is …
Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs
Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …
Extrinsic and intrinsic performance of vertical InAs nanowire MOSFETs on Si substrates
This paper presents dc and RF characterization as well as modeling of vertical InAs
nanowire (NW) MOSFETs with LG= 200 nm and Al 2 O 3/HfO 2 high-κ dielectric …
nanowire (NW) MOSFETs with LG= 200 nm and Al 2 O 3/HfO 2 high-κ dielectric …
III-V/Ge MOS device technologies for low power integrated systems
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the
promising devices for high performance and low power integrated systems in the future …
promising devices for high performance and low power integrated systems in the future …
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and Tunability
We have investigated the effects of the tri-gate channel structure on electrical properties of
extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate …
extremely thin-body (ETB) InAs-on-insulator (-OI) MOSFETs. It was found that the tri-gate …
Radio-frequency characterization of selectively regrown InGaAs lateral nanowire MOSFETs
CB Zota, G Roll, LE Wernersson… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires
constituting the channel in these devices have been formed using selective area regrowth …
constituting the channel in these devices have been formed using selective area regrowth …
Subthreshold performance of in 1–x Ga x as based dual metal with gate stack cylindrical/surrounding gate nanowire MOSFET for low power analog applications
In this paper, In 1–x Ga x As based Dual Metal with Gate Stack Cylindrical/Surrounding Gate
Nanowire MOSFET (DMGS CG/SG NWFET) has been proposed for the first time to achieve …
Nanowire MOSFET (DMGS CG/SG NWFET) has been proposed for the first time to achieve …