[HTML][HTML] Fluorine-passivated In2O3 thin film transistors with improved electrical performance via low-temperature CF4/N2O plasma
In this Letter, we report the electrical performance improvement of indium oxide (In 2 O 3)
thin film transistors (TFTs) via a low-temperature CF 4/N 2 O plasma treatment. It is found …
thin film transistors (TFTs) via a low-temperature CF 4/N 2 O plasma treatment. It is found …
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
Large mobility modulation in ultrathin amorphous titanium oxide transistors
Recently, ultrathin metal-oxide thin film transistors (TFTs) have shown very high on-off ratio
and ultra-sharp subthreshold swing, making them promising candidates for applications …
and ultra-sharp subthreshold swing, making them promising candidates for applications …
One-Volt TiO₂ Thin Film Transistors with Low-Temperature Process
We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …
High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies
The role of surface contamination, along with surface oxygen vacancies, plays a key role in
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
Enhancement-/Depletion-Mode TiO2 Thin-Film Transistors via O2/N2 Preannealing
Metal-oxide thin-film transistors (TFTs) promise to enable lightweight and low-power
applications, such as ultrathin active matrix displays and low-cost RF identification tags …
applications, such as ultrathin active matrix displays and low-cost RF identification tags …
Multilayer MoS2 Back‐Gate Transistors with ZrO2 Dielectric Layer Optimization for Low‐Power Electronics
Herein, high‐performance back‐gate molybdenum disulfide (MoS2) field‐effect transistors
(FETs) with high‐quality sub‐20 nm high‐k dielectric layers are developed for high …
(FETs) with high‐quality sub‐20 nm high‐k dielectric layers are developed for high …
Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices
Titanium dioxide (TiO2) with advantages including abundance in earth, non-toxicity, high
chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be …
chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be …
Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor
Over decades, the electrical properties of metal oxides have been a myth, stimulating
rigorous debate and research. It is commonly accepted that the oxygen vacancy, working as …
rigorous debate and research. It is commonly accepted that the oxygen vacancy, working as …