Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical …
In order to handle high power with good thermal stability at RF & microwave frequencies
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
wider bandgap semiconductor based transistors are highly desirable and GaN & AlGaN …
Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance
High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …
RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate
In this article, the authors have demonstrated and analyzed various analog/RF, and linearity
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
Analytical model for two-dimensional electron gas charge density in recessed-gate GaN high-electron-mobility transistors
A physics-based analytical model for GaN high-electron-mobility transistors (HEMTs) with
non-recessed-and recessed-gate structure is presented. Based on this model, the two …
non-recessed-and recessed-gate structure is presented. Based on this model, the two …
[HTML][HTML] LG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications
High-performance LG= 50 nm graded double-channel (GDC)-HEMT featuring AlN top
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
barrier, recessed T-gate and graded-AlGaN bottom barrier is designed and investigated …
Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications
In this piece of work, a recessed gate field‐plated AlGaN/AlN/GaN HEMT on β‐Ga2O3
substrate is proposed and its performance characteristics are compared with HEMT structure …
substrate is proposed and its performance characteristics are compared with HEMT structure …
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique
The dc characteristics of AlGaN/gallium nitride (GaN) metal-oxide-semiconductor-high
electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied …
electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied …
Back-gate bias effect on the linearity of pocket doped FDSOI MOSFET
In this article, we investigate the feasibility of enhancing the linearity Figures of Merit (FoMs)
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
by introducing pocket implant in the source/drain regions of the FDSOI MOSFET with ground …
Tri-Gate Normally-Off AlN/GaN HEMTs With 2.36 W/mm of Power Density and 67.5% Power-Added-Efficiency at Vd = 12 V
In this letter, we present high-performance tri-gate normally-off HEMTs RF power devices
using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices …
using MOCVD-grown thin barrier SiN/AlN/GaN heterostructures. The normally-off devices …