A Review on the Progress of Optoelectronic Devices Based on TiO2 Thin Films and Nanomaterials
S Ge, D Sang, L Zou, Y Yao, C Zhou, H Fu, H Xi, J Fan… - Nanomaterials, 2023 - mdpi.com
Titanium dioxide (TiO2) is a kind of wide-bandgap semiconductor. Nano-TiO2 devices
exhibit size-dependent and novel photoelectric performance due to their quantum limiting …
exhibit size-dependent and novel photoelectric performance due to their quantum limiting …
Impact of ZrO2 Dielectrics Thickness on Electrical Performance of TiO2 Thin Film Transistors with Sub-2 V Operation
In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …
High-temperature photoelectronic transport behavior of n-TiO2 nanorod clusters/p-degenerated boron-doped diamond heterojunction
S Ge, D Sang, L Zou, C Li, G Wang, J Fan… - Diamond and Related …, 2024 - Elsevier
N-TiO 2 nanorod clusters (Ncs)/p-degenerated boron-doped diamond (n-TiO 2 Ncs/p-
DBDD) film heterojunction was prepared by hydrothermal method, and the photoelectric …
DBDD) film heterojunction was prepared by hydrothermal method, and the photoelectric …
Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment
Oxide semiconductor thin-film transistors (TFTs) have shown great potential in emerging
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
applications such as flexible displays, radio-frequency identification tags, sensors, and back …
One-Volt TiO₂ Thin Film Transistors with Low-Temperature Process
We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …
process. The TFTs with the 300° C-annealed TiO 2 channel exhibit a high on/off current ratio …
[HTML][HTML] High-Temperature Optoelectronic Transport Behavior of n-TiO2 Nanoball–Stick/p-Lightly Boron-Doped Diamond Heterojunction
S Ge, D Sang, C Li, Y Shi, C Wang, C Yu, G Wang, H Xi… - Materials, 2025 - mdpi.com
The n-TiO2 nanoballs–sticks (TiO2 NBSs) were successfully deposited on p-lightly boron-
doped diamond (LBDD) substrates by the hydrothermal method. The temperature …
doped diamond (LBDD) substrates by the hydrothermal method. The temperature …
High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies
The role of surface contamination, along with surface oxygen vacancies, plays a key role in
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
the overall carrier transport in thin-film transistors (TFTs). In this study, it is shown that the …
Optimized MFS Stack with N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs
In this study, an optimized metal-ferroelectric–semiconductor (MFS) stack containing a La-
doped HfO2 (HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed …
doped HfO2 (HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed …
High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric
In this work, TiO 2 thin films deposited by the atomic layer deposition (ALD) method were
treated with a special N 2 O plasma surface treatment and used as the gate dielectric for …
treated with a special N 2 O plasma surface treatment and used as the gate dielectric for …
Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices
Titanium dioxide (TiO2) with advantages including abundance in earth, non-toxicity, high
chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be …
chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be …