In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

Negative capacitance in ferroelectric materials has been suggested as a solution to reduce
the power dissipation of electronics beyond fundamental limits. The discovery of …

Conventional FETs, although serving as the backbone of modern electronics, have
encountered fundamental limits in power efficiency due to the Boltzmann limit. Negative …

Negative permittivity of materials can be obtained by plasma oscillation or dielectric
resonance, but the relationship between these two negative permittivity behaviors has been …

Harnessing ferroelectric negative capacitance in Hf0. 5Zr0. 5O2‐based thin films is
promising for applications in nanoscale electronic devices with ultralow power dissipation …

Negative differential capacitance induced by the energy barrier formed by the nonlinear
ferroelectric insulating layer during the phase transition in negative capacitance field effect …

An in–house modeling framework for Ferroelectric Tunnelling Junctions (FTJ) is here
presented in details. After a precise calibration again experiments, the model is exploited for …

Abstract As ferroelectric Hf0. 5Zr0. 5O2 (HZO) thickness scales below 10 nm, the switching
characteristics are severely distorted typically showing an antiferroelectric-like behavior …

The negative capacitance (NC) operation of ferroelectric materials has been originally
proposed based on a homogeneous Landau theory, leading to a simple NC stabilization …

The ferroelectric negative capacitance (NC) draws a great deal of attention for low‐power
negative capacitance field‐effect transistors (NCFET) and NC capacitors. The fabrication of …