Background: The applications bas ed on IoT are nearly boundless, and the integration of the
cyber world and the physical world can be done effortlessly. TFET Based IoT applications …

An upcoming emerging device type of transistor is the TFET that is Tunnel Field Effect
transistors. MOSFET (Metal Oxide Semiconductor Field Effect Transistors) is generally used …

We propose a new design for covered source-channel tunnel field-effect transistors (CSC-
TFETs) with trench gate structures. The IV characteristics, on/off current ratio, subthreshold …

Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising
technologies to complement or replace CMOS for ultra-low-power applications, thanks to …

The low consumption of power is depends upon lowering of voltage supply. In case of
MOSFET (Metal Oxide Semiconductor Field Effect Transistor), reduction in supply voltage …

In this paper, two different TFET architectures like double gate TFET (DG-TFET) and Ge
source DG-TFET (s-Ge DG-TFET) are designed at both n and p mode using Visual TCAD …

Limitations of MOSFET due to device scaling can be overcome by Tunnel FET that works on
Band-to-Band tunneling phenomenon, have sub-threshold swing less than 60mV/dec, low …

Following Moore's law, semiconductor mainstream electronics (processors, memories, etc.)
enjoyed a very dynamic evolution over decades. Key to this success was the continuous …

In this paper, a novel design of a TFET structure using Ge-source and extending a part of the
channel into the source is proposed. The DC performance is analyzed by evaluating the ON …

The advent of tunnel field-effect transistors (TFETs) presents a pivotal advancement in the
miniaturization and energy efficiency of biomedical devices. This chapter introduces TFETs …