Kinetic interfaces form the basis of a fascinating, interdisciplinary branch of statistical
mechanics. Diverse stochastic growth processes can be unified via an intriguing nonlinear …

This review describes recent progress in the understanding of the emergence of scale
invariance in far-from-equilibrium growth. The first section is devoted to 'solvable'needle …

The use of fractal concepts in understanding various growth phenomena, such as molecular
beam epitaxy (MBE) or fluid flow in porous media, is increasingly important these days. This …

In semiconductor heteroepitaxy the growing film frequently undergoes a series of strain relief
mechanisms that may include surface reconstruction, step bunching, faceting, and finally …

EXPERIMENTAL OBSERVATIONS OF SELF-AFFINE SCALING AND KINETIC ROUGHENING
AT SUB-MICRON LENGTHSCALES | International Journal of Modern Physics B World …

Dynamical scaling behavior of the kinetic roughening phenomena in (1+ 1)-and (2+ 1)-
dimensional models of molecular beam epitaxy (MBE) is studied using kinetic Monte Carlo …

The surface morphology of Ge (001) films grown by molecular beam epitaxy on a Ge (001)
substrate is measured using scanning tunneling microscopy. Growth mounds are observed …

This study compares surface roughness of SiO 2 thin layers which are deposited by three
different processes (plasma-enhanced chemical vapor deposition, physical vapor deposition …

A two-step Monte Carlo method for atomistically simulating low energy physical vapor
deposition processes is developed and used to model the two-dimensional physical vapor …

We have studied the influence of InP buffer-layer morphology in the formation of InAs
nanostructures grown on InP (001) substrates by solid-source molecular-beam epitaxy. Our …