Assembling your nanowire: An overview of composition tuning in ternary III–V nanowires
M Ghasemi, ED Leshchenko, J Johansson - Nanotechnology, 2020 - iopscience.iop.org
The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …
design their properties has made them ideal candidates for applications in fields as diverse …
Investigation of the effect of the doping order in GaN nanowire p–n junctions grown by molecular-beam epitaxy
O Saket, J Wang, N Amador-Mendez, M Morassi… - …, 2020 - iopscience.iop.org
We analyse the electrical and optical properties of single GaN nanowire p–n junctions
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as doping …
grown by plasma‐assisted molecular-beam epitaxy using magnesium and silicon as doping …