Luminescence is one of the most important characterisation tools of semiconductor materials
and devices. Recently, a very efficient analytical set of equations has been applied to …

The spatial uniformity of GaSb-and InAs substrate-based structures containing type II
quantum wells was probed by means of large-scale photoluminescence (PL) mapping …

A measurement system is presented for evaluating the characteristics of both sides of an
LED wafer using electroluminescence (EL). Integrating spheres (IS), photodiodes, pico …

The optimized nonuniform growth process was used to achieve spatially dependent
reflectivity and dispersions characteristics in a highly dispersive semiconductor mirror. The …

We calculate the luminescence of the dilute quaternary InAs (N, Sb). The incorporation of N
leads to a reduction of the energy gap of the host InAs and Sb acts as a surfactant, improves …

The purpose of this paper is to outline the principles of optical characterisation of the new
kind of semiconductor devices: vertical-external-cavity surface-emitting lasers (VECSELs) …

High finesse microcavities can consist of hundreds of different layers and can be several
microns thick, with the absolute thickness of each layer and the smoothness of each …

This paper reviews the experimental and theoretical results obtained during work on the
modern semiconductor devices employing one-dimensional photonic structures. After short …

Lasing behaviour of a vertical-external-cavity surface-emitting laser (VECSEL)[1] depends
largely on gain characteristic of its structure. Thus, well designed and grown with the utmost …

In this paper we demonstrate how the tuning of the VECSEL heterostructure can be
precisely determined. Since the VECSEL active region is embodied in a microcavity, the …