A review of DC/DC converter-based electrochemical impedance spectroscopy for fuel cell electric vehicles
Considering transport applications, there is worldwide an increasing interest in the use of
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
hydrogen-energy for supplying electric powertrains. In order to extend the fuel cell lifespan …
Fault diagnosis techniques for permanent magnet AC machine and drives—A review of current state of the art
This paper reviews the current state of the art of condition monitoring and fault diagnosis
techniques for permanent magnet (PM) machines. It also takes into account the past …
techniques for permanent magnet (PM) machines. It also takes into account the past …
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs
The behavior of silicon carbide (SiC) power MOSFETs under stressful short-circuit (SC)
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
conditions is investigated in this paper. Two different SC failure phenomena for SiC power …
Review on the reliability mechanisms of SiC power MOSFETs: A comparison between planar-gate and trench-gate structures
J Wei, Z Wei, H Fu, J Cao, T Wu, J Sun… - … on Power Electronics, 2023 - ieeexplore.ieee.org
To clarify the current research situation and offer a better understanding of the reliability for
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (mosfet s), a …
Gate failure physics of SiC MOSFETs under short-circuit stress
The unique gate failure mode of SiC MOSFETs is often identified but has not been fully
understood yet. In this letter, post-failure cell inspections demonstrate that its main cause is …
understood yet. In this letter, post-failure cell inspections demonstrate that its main cause is …
Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs
MD Kelley, BN Pushpakaran… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic
design with improved efficiency as well as increased power density. High-voltage spikes …
design with improved efficiency as well as increased power density. High-voltage spikes …
Robustness of 650-V enhancement-mode GaN HEMTs under various short-circuit conditions
This paper presents the short-circuit behavior and degradation of 650-V/60-A enhancement-
mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test …
mode Gallium nitride (GaN) high electron mobility transistors (HEMTs) under various test …
Investigations on the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive short-circuit tests
X Zhou, H Su, Y Wang, R Yue, G Dai… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further
verified before they could replace silicon counterparts in power applications. In this paper …
verified before they could replace silicon counterparts in power applications. In this paper …
[PDF][PDF] 基于开关轨迹优化的SiC MOSFET 有源驱动电路研究综述
王宁， 张建忠 - TRANSACTIONS OF CHINA …, 2022 - dgjsxb.ces-transaction.com
摘要随着SiC MOSFET 的推广, 其开关暂态过程中的超调, 振荡以及电磁干扰问题越来越受到
人们的重视. 有源栅极驱动(AGD) 电路作为一种新型驱动电路, 已被广泛应用于SiC MOSFET …
人们的重视. 有源栅极驱动(AGD) 电路作为一种新型驱动电路, 已被广泛应用于SiC MOSFET …
A deep insight into the degradation of 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching stresses
X Zhou, H Su, R Yue, G Dai, J Li… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, the long-term reliability of commercial 1.2-kV 4H-SiC MOFSETs under
repetitive unclamped inductive switching stresses is evaluated experimentally. The …
repetitive unclamped inductive switching stresses is evaluated experimentally. The …