Automotive power module packaging: Current status and future trends
Y Yang, L Dorn-Gomba, R Rodriguez, C Mak… - IEEE …, 2020 - ieeexplore.ieee.org
Semiconductor power modules are core components of power electronics in electrified
vehicles. Packaging technology often has a critical impact on module performance and …
vehicles. Packaging technology often has a critical impact on module performance and …
A review of SiC power module packaging: Layout, material system and integration
Silicon-Carbide (SiC) devices with superior performance over traditional silicon power
devices have become the prime candidates for future high-performance power electronics …
devices have become the prime candidates for future high-performance power electronics …
Overview of real-time lifetime prediction and extension for SiC power converters
Remaining useful lifetime prediction and extension of Si power devices have been studied
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
extensively. Silicon carbide (SiC) power devices have been developed and commercialized …
Junction temperature estimation of a SiC MOSFET module for 800V high-voltage application in electric vehicles
Z Shuai, S He, Y Xue, Y Zheng, J Gai, Y Li, G Li, J Li - Etransportation, 2023 - Elsevier
Abstract Silicon Carbide (SiC) power devices have significant advantages on power density
and energy efficiency, and are widely accepted as promising solutions for future electric …
and energy efficiency, and are widely accepted as promising solutions for future electric …
Failure Analysis of 1200-V/150-A SiC MOSFET Under Repetitive Pulsed Overcurrent Conditions
SiC MOSFETs are a leading option for increasing the power density of power electronics;
however, for these devices to supersede the Si insulated-gate bipolar transistor, their …
however, for these devices to supersede the Si insulated-gate bipolar transistor, their …
Evaluating different implementations of online junction temperature sensing for switching power semiconductors
H Niu, RD Lorenz - IEEE Transactions on Industry Applications, 2016 - ieeexplore.ieee.org
Switching power semiconductor online junction temperature T j sensing is essential for
device switching performance evaluation, device switching control, and device lifetime …
device switching performance evaluation, device switching control, and device lifetime …
Review of state-of-the-art integration technologies in power electronic systems
As an important development direction of power electronic systems, the integration
technologies can bring many benefits, such as size reduction, reliability improvement, cost …
technologies can bring many benefits, such as size reduction, reliability improvement, cost …
Accelerating the screening of high-entropy Co-Mn-Fe-Ni-Zn-O gradient films for highly stable NTC materials through co-sputtering combinatorial synthesis
X Wang, Y Song, Y Fan, B Gao, Y Dou, A Chang… - Applied Surface …, 2025 - Elsevier
High-entropy negative temperature coefficient (NTC) thermistor thin films, renowned for their
exceptional stability, represent a significant advancement in the field of temperature …
exceptional stability, represent a significant advancement in the field of temperature …
A highly linear temperature sensor using GaN-on-SiC heterojunction diode for high power applications
S Madhusoodhanan, S Sandoval… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Silicon carbide (SiC) power devices have been commercialized up to 1.7 kV with operating
temperatures up to 573 K. The temperature limitations of SiC devices are generally derived …
temperatures up to 573 K. The temperature limitations of SiC devices are generally derived …
A Technique for the In-Situ Experimental Extraction of the Thermal Impedance of Power Devices
In this letter, an innovative technique is presented, which allows the experimental extraction
of the junction-to-ambient thermal impedance (Z TH) of power devices operating in their …
of the junction-to-ambient thermal impedance (Z TH) of power devices operating in their …