Controlled nano-roughening of the GaN surface by post-growth thermal annealing
GaN-based semiconductor structures have been widely used in photonic, electronic, and
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
optoelectronic devices. However, due to the lack of lattice-matched substrates for GaN …
Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: optical properties evolution at different …
In this paper, we present a systematic study of the optical properties evolution of GaN films
during the complete growth process on SiN-treated sapphire substrates by atmospheric …
during the complete growth process on SiN-treated sapphire substrates by atmospheric …
Exciton-phonon interaction in planar nitride nanostructures: The case of acoustic phonons
I Boyko - Physical Review B, 2023 - APS
A quantum mechanical theory which describes the exciton-acoustic phonon interaction in
plane semiconductor AlN/AlGaN nanosystems at nonzero temperatures has been …
plane semiconductor AlN/AlGaN nanosystems at nonzero temperatures has been …
Correlation of structural and optical properties of AlGaN films grown on SiN-treated sapphire by MOVPE
We investigated the structural and optical properties of AlGaN films grown on SiN-treated
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
sapphire substrates, without and with GaN-template, by atmospheric pressure metal organic …
Effects of thermal ionized-impurities and mosaicity on the excitonic properties of GaN grown by MOVPE
In this work, the effects of thermal ionized-impurities and mosaicity on the excitonic
properties of GaN are systematically investigated. For this reason, a number of GaN …
properties of GaN are systematically investigated. For this reason, a number of GaN …