Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

Abstract An Er 3+-doped AlN film has been prepared by radio frequency magnetron
sputtering and its photoluminescence (PL) characteristics were studied in terms of optical …

Using low-temperature cathodoluminescence spectroscopy, we study the properties of N-
and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN {0001}. Compared …

The influence of temperature of nitridation and AlN buffer layer growth on N-polar gallium
nitride (GaN) grown on 2-in. vicinal sapphire substrate by metal organic chemical vapour …

Excitons are the lowest excited state of the electronic subsystem in semiconductors,
composed of a bound electron–hole pair interacting via screened coulomb potential …

High-quality aluminum nitride (AlN) crystals are the key material for the development of high-
performance solid-state solar-blind vacuum-ultraviolet (VUV) photodetectors. However, the …

Abstract Luminescence processes of AlN: Eu ceramics, prepared by high temperature spark
plasma sintering method, were studied basing on material spectral characterization by …

The commonly observed absorption around 265 nm in AlN is hampering the outcoupling
efficiency of light‐emitting diodes (LEDs) emitting in the UV‐C regime. Carbon impurities in …

Aluminum nitride (AlN) exhibits excellent high-temperature resistance, chemical stability,
and a wide bandgap, making it a prime candidate material for deep ultraviolet detectors. In …

The effect of oxygen-atom incorporation in 50-nm-thick ferroelectric Al0. 89Sc0. 11N films
was investigated. The fabricated films exhibited a high remanent polarization (exceeding …