Photoresponse characteristics of Au/(CoFe2O4-PVP)/n-Si/Au (MPS) diode

AB Ulusan, A Tataroglu, Ş Altındal… - Journal of Materials …, 2021 - Springer
Photoresponse characteristics of the Au/(CoFe2O4-PVP)/n-Si (MPS) diode were
investigated using current–voltage (I–V) measurements achieved under dark and various …

Fabrication and photovoltaic properties of organic solar cell based on zinc phthalocyanine

ZU Islam, M Tahir, WA Syed, F Aziz, F Wahab, SM Said… - Energies, 2020 - mdpi.com
Herein, we report thin films' characterizations and photovoltaic properties of an organic
semiconductor zinc phthalocyanine (ZnPc). To study the former, a 100 nm thick film of ZnPc …

Influence of substrate temperature on the structural, optical properties, and IV characteristics of n-AgInSe2/p-Si heterojunctions

H Shaban, MA Mahdy, SH Moustafa… - Materials Science and …, 2023 - Elsevier
The influence of substrate temperatures T sub (300–573 K) on the structure, optical, and IV
electrical properties of nanostructured AgInSe 2 thin films has been studied. The thermal …

Effect of Triton X-100 on the double layer capacitance and conductivity of poly (3, 4-ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) films

T Tevi, SW Saint Birch, SW Thomas, A Takshi - Synthetic metals, 2014 - Elsevier
Among conducting polymers, PEDOT: PSS is a promising electrode material for
supercapacitors, due to stability and simple processability of the polymer. However, a thin …

Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode

LW Lim, F Aziz, FF Muhammad, A Supangat… - Synthetic Metals, 2016 - Elsevier
In the present study, poly {4, 8-bis [5-(2-ethylhexyl) thiophen-2-yl] benzo [1, 2-b: 4, 5-b']
dithiophene-2, 6-diyl-alt-3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno [3, 4-b] thiophene-4, 6 …

Investigation of electrical and capacitance-voltage characteristics of GO/TiO2/n-Si MOS device

A Ashery, H Shaban, SA Gad, BA Mansour - Materials Science in …, 2020 - Elsevier
In this paper electrical analysis GO/TiO 2/Si MOS junction was performed. Current–voltage (I–
V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality …

Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

O Pakma, Ş Çavdar, H Koralay, N Tuğluoğlu… - Physica B: Condensed …, 2017 - Elsevier
In present work, Coronene thin films on Si wafer have been deposited by the spin coating
method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current …

Effect of gamma-ray irradiation on the electrical characteristics of Al/C24H12/p-Si nano-structure

D Akay, S Karadeniz, AB Selçuk, SB Ocak - Physica Scripta, 2018 - iopscience.iop.org
We have investigated the effects of 60 Co gamma-ray irradiation on the electrical properties
of an Al/C 24 H 12/p-Si metal-polymer-semiconductor (MPS) Schottky diode such as series …

Eco-benign visible wavelength photodetector based on phthalocyanine-low bandgap copolymer composite blend

Q Zafar, F Aziz, K Sulaiman - RSC advances, 2016 - pubs.rsc.org
Herein, we demonstrate a novel solution-processed photodetector using an organic
composite blend of VOPcPhO and PCDTBT to function as the donor (D) and the acceptor (A) …

The comparison of electrical characteristics of Au/n-InP/In and Au/In2S3/n-InP/In junctions at room temperature

T Çakıcı, M Sağlam, B Güzeldir - Materials Science and Engineering: B, 2015 - Elsevier
Abstract We fabricated Au/n-InP/In and Au/In 2 S 3/n-InP/In junctions and investigated their
electrical properties at room temperature. The In 2 S 3 thin film has been directly formed on n …