Near-ideal top-gate controllability of InGaZnO thin-film transistors by suppressing interface defects with an ultrathin atomic layer deposited gate insulator
An ultrathin atomic-layer-deposited (ALD) AlO x gate insulator (GI) was implemented for self-
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although …
As-Grown Crystalline InGaZnO by Spray Pyrolysis on a Flexible Substrate for a Thin-Film Transistor with Excellent Stability
The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …
High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …
Roles of Oxygen interstitial defects in atomic-layer deposited InGaZnO thin films with controlling the cationic compositions and gate-stack processes for the devices …
SH Bae, JH Yang, YH Kim, YH Kwon… - … applied materials & …, 2022 - ACS Publications
Roles of oxygen interstitial defects located in the In–Ga–Zn-O (IGZO) thin films prepared by
atomic layer deposition were investigated with controlling the cationic compositions and …
atomic layer deposition were investigated with controlling the cationic compositions and …
Junctionless Structure Indium–Tin Oxide Thin-Film Transistors Enabling Enhanced Mechanical and Contact Stability
SP Jeon, JW Jo, D Nam, DW Kang… - … Applied Materials & …, 2024 - ACS Publications
In recent years, considerable attention has focused on high-performance and flexible
crystalline metal oxide thin-film transistors (TFTs). However, achieving both high …
crystalline metal oxide thin-film transistors (TFTs). However, achieving both high …
Observation of hydrogen-related defect in subgap density of states and its effects under positive bias stress in amorphous InGaZnO TFT
JT Jang, D Ko, SJ Choi, DM Kim… - IEEE Electron Device …, 2021 - ieeexplore.ieee.org
In amorphous oxide semiconductors, hydrogen-related defects have been unable to be
observed from the electrical characteristics of thin-film transistors (TFTs) in comparison to …
observed from the electrical characteristics of thin-film transistors (TFTs) in comparison to …
Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO2 Spacer and an In–Ga–Zn–O Active Channel
A nanoscale vertical-channel thin film transistor (V-TFT) with a channel length shorter than
160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films …
160 nm was fabricated and characterized, in which In–Ga–Zn–O (IGZO) and SiO2 thin films …
Effect of Moisture Exchange Caused by Low‐Temperature Annealing on Device Characteristics and Instability in InSnZnO Thin‐Film Transistors
Thin‐film transistors (TFTs) in practical operations are inevitably impacted by moisture and
temperature. An investigation on the joint effect of environmental moisture and working …
temperature. An investigation on the joint effect of environmental moisture and working …
Analysis of drain-induced barrier lowering in InGaZnO thin-film transistors
TJ Yang, JH Kim, CII Ryoo, SJ Myoung… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Characterization of short-channel amorphous indium gallium zinc oxide (InGaZnO)(a-IGZO)
thin-film transistors (TFTs) has been a crucial issue to realize higher resolution display and …
thin-film transistors (TFTs) has been a crucial issue to realize higher resolution display and …
a-InGaZnO Thin-Film Transistors With Novel Atomic Layer-Deposited HfO2 Gate Insulator Using Two Types of Reactant Gases
Plasma-enhanced chemical vapor deposition is often utilized to fabricate amorphous indium–
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with mobility of approximately 7 …
gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) with mobility of approximately 7 …