Automotive traction inverters: Current status and future trends
J Reimers, L Dorn-Gomba, C Mak… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
Traction inverters are crucial components of modern electrified automotive powertrains.
Advances in power electronics have enabled lower cost inverters with high reliability …
Advances in power electronics have enabled lower cost inverters with high reliability …
A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Study of the characteristics of battery packs in electric vehicles with parallel-connected lithium-ion battery cells
This paper studies the characteristics of battery packs with parallel-connected lithium-ion
battery (LiB) cells. To investigate the influence of the cell inconsistency problem in parallel …
battery (LiB) cells. To investigate the influence of the cell inconsistency problem in parallel …
The Rogowski coil principles and applications: A review
The Rogowski coil is an old device for current measurement. It has been modified and
improved over a century and is still being studied for new applications. The Rogowski coil …
improved over a century and is still being studied for new applications. The Rogowski coil …
Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules
Y Wen, Y Yang, Y Gao - IEEE Transactions on power …, 2020 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
MOSFETs) are widely used in higher power density and higher efficiency power electronic …
A review of traditional helical to recent miniaturized printed circuit board Rogowski coils for power-electronic applications
Y Shi, Z Xin, PC Loh, F Blaabjerg - IEEE Transactions on Power …, 2020 - ieeexplore.ieee.org
Latest wide-bandgap power devices are switching progressively faster compared with
existing silicon devices. Their accurate current measurements for either control or protection …
existing silicon devices. Their accurate current measurements for either control or protection …
High-scalability enhanced gate drivers for SiC MOSFET modules with transient immunity beyond 100 V/ns
Silicon-carbide (SiC) transistors with growing readiness for the power converter market have
raised an emerging need for high-performance gate driver (GD) units to maximize their …
raised an emerging need for high-performance gate driver (GD) units to maximize their …
Active gate driver for dynamic current balancing of parallel-connected SiC MOSFETs
In high-power applications, parallel connection of discrete silicon carbide (SiC) mosfet s is
necessary to increase the current rating. However, the unbalanced dynamic current during …
necessary to increase the current rating. However, the unbalanced dynamic current during …
Balancing of peak currents between paralleled SiC MOSFETs by drive-source resistors and coupled power-source inductors
The peak currents between two paralleled SiC MOSFETs could differ significantly due to the
mismatch in threshold voltages V th. The method described herein employs passive …
mismatch in threshold voltages V th. The method described herein employs passive …
Design and evaluation of laminated busbar for three-level T-type NPC power electronics building block with enhanced dynamic current sharing
This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …