Influence of Underlap on Gate Stack DG-MOSFET for analytical study of Analog/RF performance
In this paper, the characteristics of 18 nm Underlap Double Gate (U-DG) NMOSFET with
gate stack,(GS) are presented. The high-k dielectric as gate insulator under consideration is …
gate stack,(GS) are presented. The high-k dielectric as gate insulator under consideration is …
Drain current modelling of asymmetric junctionless dual material double gate MOSFET with high K gate stack for analog and RF performance
This paper presents the continuous 2D analytical modelling of electrostatic potential,
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
threshold voltage (V th), subthreshold swing, drain induced barrier lowering (DIBL) and …
Analysis of High- Spacer Asymmetric Underlap DG-MOSFET for SOC Application
In this paper, asymmetric underlap double-gate (AUDG) MOSFET is studied to analyze the
influence of high-k spacer on the intrinsic device parameters. The AUDG-MOSFET …
influence of high-k spacer on the intrinsic device parameters. The AUDG-MOSFET …
Drain current modelling of unipolar junction dual material double-gate MOSFET (UJDMDG) for SoC applications
A simple continuous analytical model is developed for the drain current of unipolar junction
dual material double gate MOSFET (UJDMDG). The model is based on electrostatic …
dual material double gate MOSFET (UJDMDG). The model is based on electrostatic …
The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs
The aim of this study is to examine the analog/RF performance characteristics of graphene
nanoribbon (GNR) field-effect transistors (FETs) using a novel technique called underlap …
nanoribbon (GNR) field-effect transistors (FETs) using a novel technique called underlap …
Benefits of asymmetric underlap dual‐k spacer hybrid fin field‐effect transistor over bulk fin field‐effect transistor
KP Pradhan, KP Sahu - IET Circuits, Devices & Systems, 2016 - Wiley Online Library
Asymmetric underlap dual‐k spacer hybrid fin field‐effect transistor (FinFET) is a novel
hybrid device that combines three significant and advanced technologies, ie ultra‐thin body …
hybrid device that combines three significant and advanced technologies, ie ultra‐thin body …
Effect of high-K spacer on the performance of non-uniformly doped DG-MOSFET
This paper presents the performance of non-uniformed doped double gate (DG) MOSFET
with different spacer variations with an aim to analysis the effects of short channel and …
with different spacer variations with an aim to analysis the effects of short channel and …
Comparisons between dual and tri material gate on a 32 nm double gate MOSFET
The paper reports a comparative analysis between the dual material gate double gate (DMG-
DG) nMOSFET and the tri material gate double gate (TMG-DG) nMOSFET in terms of their …
DG) nMOSFET and the tri material gate double gate (TMG-DG) nMOSFET in terms of their …
A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications
In the proposed work, a novel T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap
Gate All Around (GAA) MOSFET is presented and its performance is compared with that of …
Gate All Around (GAA) MOSFET is presented and its performance is compared with that of …
Influence of Varying Recessed Gate Height on Analog/RF Performances of a Novel Normally-Off Underlapped Double Gate AlGaN/GaN-based MOS-HEMT
C Chakraborty, A Kundu - IETE Journal of Research, 2024 - Taylor & Francis
Current transistor technology has issues with off-state current which reduces power
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …
efficiency. The paper presents a novel Normally-off Underlapped Dual Gate (U-DG) …