Low-Temperature Route to Direct Amorphous to Rutile Crystallization of TiO2 Thin Films Grown by Atomic Layer Deposition

J Saari, H Ali-Löytty, K Lahtonen… - The Journal of …, 2022 - ACS Publications
The physicochemical properties of titanium dioxide (TiO2) depend strongly on the crystal
structure. Compared to anatase, rutile TiO2 has a smaller bandgap, a higher dielectric …

A systematical investigation of layer growth rate, impurity level and morphology evolution in TiO2 thin films grown by ALD between 100 and 300° C

B Xia, JJ Ganem, E Briand, S Steydli… - Vacuum, 2023 - Elsevier
TiO 2 thin films prepared by atomic layer deposition (ALD) have attracted great attention due
to the widespread application of the oxide as a promising charge storage material for lithium …

A theoretical study on the surface reaction of tetrakis (dimethylamino) titanium on titanium oxide

HL Kim, R Hidayat, K Khumaini, WJ Lee - Physical Chemistry Chemical …, 2023 - pubs.rsc.org
Tetrakis (dimethylamino)-titanium (TDMAT, Ti (NMe2) 4) has been used for the low-
temperature atomic layer deposition (ALD) process of titanium oxide (TiO2) films. In this …

Temperature‐Dependent Properties of Atomic Layer Deposition‐Grown TiO2 Thin Films

NK Chowdhary, T Gougousi - Advanced Materials Interfaces, 2025 - Wiley Online Library
This study investigates the presence of titanium oxynitride bonds in titanium dioxide (TiO2)
thin films grown by atomic layer deposition (ALD) using tetrakis dimethyl amino titanium …

Investigating the Properties of Transition Metal-Based Thin Films

NK Chowdhary - 2024 - search.proquest.com
Transition metal-based thin films, including oxides and nitrides, are widely studied due to
their diverse properties and applications. Among these materials, transition metal oxides …

CROISSANCE D'UN FILM ALD D'Al2O3 ÉTUDIÉE PAR ANALYSE DU FAISCEAU D'IONS (IBA) ET SPECTROSCOPIE PHOTOÉLECTRONIQUE À RAYONS X: VERS …

B Xia, JJ Ganem, E Briand, S Steydli… - Lège Cap …, 2024 - secure.key4events.com
Les films minces d'Al2O3 obtenus par dépôt de couches atomiques (ALD) ont suscité
beaucoup d'intérêt en raison de leurs applications dans les dispositifs électroniques et les …