A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed
using a first shadow mask evaporation. A second conducting layer is formed on a portion of …

A method may include providing a surface feature on a substrate, the surface feature
comprising a feature shape a feature location, and a dimension along a first direction within …

A method of patterning a substrate. The method may include providing a surface feature on
the substrate, the surface feature having a first dimension along a first direction within a …

Nano-scale junctions, wires, and junction arrays are created by using a focused high-energy
ion beam to direct-write insulating or poorly conducting barriers into thin films of materials …

To remove the mask formed by nanoimprinting after dry etching. A mask is formed by
nanoimprinting on a back surface of a substrate. Subsequently, dry etching is performed …

A technique relates to correcting an area of overlap between two films created by sequential
shadow mask evaporations. At least one process is performed of: correcting design features …

Primary Examiner—Binh X Tran ABSTRACT A method of patterning a substrate. The method
may include: providing a first surface feature and a second surface feature in a staggered …

BACKGROUND In a reactive ion etching (RIE) process using a resist in a semiconductor
process, when a selection ratio of resist for a material to be etched is Small, an etching …

A method of patterning a substrate. The method may include providing a surface feature on
the substrate, the surface feature having a first dimension along a first direction within a …

A system includes a substrate, a high-temperature supercon ductor compound film disposed
on the substrate, an array of superconducting regions formed within the film, a plurality of …