Two dimensional and layered transition metal oxides
Single-or multi-layer transition metal oxides (TMOs) have a relatively longer history than
other atomically thin materials. TMOs comprise many earth-abundant minerals and have …
other atomically thin materials. TMOs comprise many earth-abundant minerals and have …
Two‐dimensional dielectric nanosheets: novel nanoelectronics from nanocrystal building blocks
Abstract Two‐dimensional (2D) nanosheets, which possess atomic or molecular thickness
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen - Journal of applied physics, 2005 - pubs.aip.org
Atomic layer deposition (ALD), a chemical vapor deposition technique based on sequential
self-terminating gas–solid reactions, has for about four decades been applied for …
self-terminating gas–solid reactions, has for about four decades been applied for …
High-k Organic, Inorganic, and Hybrid Dielectrics for Low-Voltage Organic Field-Effect Transistors
RP Ortiz, A Facchetti, TJ Marks - Chemical reviews, 2010 - ACS Publications
The search for high dielectric constant (high-k) gate dielectric materials for field-effect
transistor-enabled (FET) applications has stimulated important research activities in both …
transistor-enabled (FET) applications has stimulated important research activities in both …
Structural, optical, and electrical properties of TiO2 thin films deposited by ALD: Impact of the substrate, the deposited thickness and the deposition temperature
TiO 2 films were deposited by ALD on Si and glass substrates. FTIR analysis reveals an
incomplete process for deposition temperatures below 160° C. The transition from the …
incomplete process for deposition temperatures below 160° C. The transition from the …
High Permittivity CaCu3Ti4O12 Particle‐Induced Internal Polarization Amplification for High Performance Triboelectric Nanogenerators
Here, a composite material based on the butylated melamine formaldehyde (BMF) and high
permittivity CaCu3Ti4O12 (CCTO) particles as a triboelectric dielectric material for stable …
permittivity CaCu3Ti4O12 (CCTO) particles as a triboelectric dielectric material for stable …
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
The resistive switching mechanism of 20-to 57-nm-thick TiO 2 thin films grown by atomic-
layer deposition was studied by current-voltage measurements and conductive atomic force …
layer deposition was studied by current-voltage measurements and conductive atomic force …
Growth, dielectric properties, and memory device applications of ZrO2 thin films
D Panda, TY Tseng - Thin Solid Films, 2013 - Elsevier
In the advancement of complementary metal-oxide-semiconductor device technology, SiO2
was used as an outstanding dielectric and has dominated the microelectronics industry for …
was used as an outstanding dielectric and has dominated the microelectronics industry for …
1T-1C dynamic random access memory status, challenges, and prospects
A Spessot, H Oh - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the status, the challenges, and the perspective of 1T-1C dynamic
random access memory (DRAM) chip. The basic principles of the DRAM are presented …
random access memory (DRAM) chip. The basic principles of the DRAM are presented …