Reliability challenges in CMOS technology: A manufacturing process perspective

Q Teng, Y Hu, R Cheng, Y Wu, G Zhou… - Microelectronic …, 2023 - Elsevier
With the development of automotive electronics, the characteristics of device reliability have
received widespread attention. The improvement of device reliability primarily depends on …

Dispersal at hydrothermal vents: a summary of recent progress

PA Tyler, CM Young - Hydrobiologia, 2003 - Springer
The discovery of hydrothermal vents along the Galapagos Rift in 1977 opened up one of the
most dynamic and productive research themes in marine biology. In the intervening 25 …

Robustness to head misalignment of virtual sound imaging systems

T Takeuchi, PA Nelson, H Hamada - The Journal of the Acoustical …, 2001 - pubs.aip.org
When binaural sound signals are presented with two loudspeakers, the listener's ears are
required to be in the relatively small region which is under control of the system …

Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion

G Impellizzeri, S Mirabella, F Priolo… - Journal of applied …, 2006 - pubs.aip.org
While it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms
behind this process are still unclear. In this work we report experimental studies about the F …

Superior improvements in GIDL and retention by fluorine implantation in saddle-fin array devices for sub-40-nm DRAM technology

CM Yang, JC Wang, WP Lee, CC Lee… - IEEE electron device …, 2013 - ieeexplore.ieee.org
A highly improved method to reduce gate-induced drain leakage and retention fail bit counts
is proposed for use in the sub-40-nm dynamic random access memory technologies …

[PDF][PDF] Modeling of annealing processes for ion-implanted single-crystalline silicon solar cells

FA Wolf - 2014 - researchgate.net
Ion implantation technology has become economically competitive for solar cell doping in
about 2012. The decisive reduction in production costs was achieved by using plasma …

Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si

M Mastromatteo, D De Salvador, E Napolitani… - Physical Review B …, 2010 - APS
The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized
Si has been experimentally investigated, explained, and simulated, for different F …

Reduced boron diffusion under interstitial injection in fluorine implanted silicon

MN Kham, I Matko, B Chenevier… - Journal of Applied Physics, 2007 - pubs.aip.org
Point defect injection studies are performed to investigate how fluorine implantation
influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich …

Study of fluorine behavior in silicon by selective point defect injection

MN Kham, HAW El Mubarek, JM Bonar… - Applied Physics …, 2005 - pubs.aip.org
This letter reports a point defect injection study of 185 keV 2.3× 10 15 cm− 2 fluorine
implanted silicon. After an inert anneal at 1000 C⁠, fluorine peaks are seen at depths of 0.3 …

Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si/sub 1-x/Ge/sub x

HAWE Mubarek, M Karunaratne… - IEEE transactions on …, 2005 - ieeexplore.ieee.org
This paper studies how boron transient enhanced diffusion (TED) and boron thermal
diffusion in Si/sub 1-x/Ge/sub x/are influenced by a high-energy fluorine implant at a dose in …