This work investigated the modulation responses of Fabry–Perot Ge-on-Si lasers by
modeling and simulations. The 3 dB bandwidth dependence on the structure parameters …

After decades of advancement, optoelectronic technology has emerged as a pivotal player
in various domains such as optical communication, optical interconnection, and optical …

Abstract Strained SiGe/Ge microbridges are fabricated based on Ge-on-Si (1 1 0). The Si (1
1 0) substrate is employed to fabricate the microbridge along [1 1 1] direction as uniaxial …

We observe strong room-temperature photoluminescence from Ge microbridges formed on
Ge-on-Si (110). The Si (110) substrate is employed to fabricate the bridge along [111] …

Integrated circuit technology has undergone significant advancements and progress over
the past few decades. However, as the demand to further shrink circuit sizes increases …

High-quality Ge thin films are essential for enhancing Ge-based optical devices like
transistors, photodetectors, LEDs, and lasers. Epitaxial Ge (epi-Ge) thin films on Si are …

We fabricate free-standing microbridge web-structures based on Ge-on-Si (110) and
observe drastically enhanced room-temperature photoluminescence (PL) compared to …