We review the Raman thermography technique, which has been developed to determine the
temperature in and around the active area of semiconductor devices with submicron spatial …

COD diagram determined for a batch of broad‐area AlGaAs diode lasers. The time to COD
within a single current pulse is plotted versus the actual average optical power in the …

This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …

We report on detailed experimental investigation of thermal properties of AlGaAs/GaAs
quantum cascade lasers (QCLs) emitting at wavelength of 9.4 μm. Different mounting …

author=" Yin Liang"," Liu Xiaowei"," Chen Weiping"," Zhou Zhiping", keywords=" closed-loop
accelerometer"," interface circuit"," switched capacitor"," low noise", abstract=" This paper …

Catastrophic optical mirror damage (COMD) is analyzed for 808 nm emitting diode lasers in
single-pulse operation in order to separate facet degradation from subsequent degradation …

The development of charge coupled device thermoreflectance (CCD TR) instrumentation for
accurate and rapid evaluation of the thermal characteristics of quantum cascade lasers is …

Output facet temperatures of an uncoated high power continuous-wave quantum cascade
laser (QCL) emitting at 8.5 μm were measured by using micro-Raman thermometry. The rate …

High power broad area diode lasers with high optical power density in a small focus spot are
in strong commercial demand. For this purpose, the beam quality, quantified via the beam …

In this paper, we report on the experimental investigation of the thermal performance of
lattice matched AlInAs/InGaAs/InP quantum cascade lasers. Investigated designs include …