A strategic review on gallium oxide based deep‐ultraviolet photodetectors: recent progress and future prospects

D Kaur, M Kumar - Advanced optical materials, 2021 - Wiley Online Library
With the use of UV‐C radiation sterilizers on the rise in the wake of the recent pandemic, it
has become imperative to have health safety systems in place to curb the ill‐effects on …

[HTML][HTML] A review of Ga2O3 materials, processing, and devices

SJ Pearton, J Yang, PH Cary, F Ren, J Kim… - Applied Physics …, 2018 - pubs.aip.org
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Review of gallium-oxide-based solar-blind ultraviolet photodetectors

X Chen, F Ren, S Gu, J Ye - Photonics Research, 2019 - opg.optica.org
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Radiation damage effects in Ga 2 O 3 materials and devices

J Kim, SJ Pearton, C Fares, J Yang, F Ren… - Journal of Materials …, 2019 - pubs.rsc.org
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

β-Ga2O3-Based Power Devices: A Concise Review

M Zhang, Z Liu, L Yang, J Yao, J Chen, J Zhang, W Wei… - Crystals, 2022 - mdpi.com
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

[HTML][HTML] Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance

AY Polyakov, VI Nikolaev, EB Yakimov, F Ren… - Journal of Vacuum …, 2022 - pubs.aip.org
A review is given of reported trap states in the bandgaps of different polymorphs of the
emerging ultrawide bandgap semiconductor Ga 2 O 3. The commonly observed defect …

Deep-level defects in gallium oxide

Z Wang, X Chen, FF Ren, S Gu… - Journal of Physics D …, 2020 - iopscience.iop.org
As an ultrawide bandgap semiconductor, gallium oxide (Ga 2 O 3) has superior physical
properties and has been an emerging candidate in the applications of power electronics and …

Lateral β-Ga2O3 field effect transistors

KD Chabak, KD Leedy, AJ Green, S Mou… - Semiconductor …, 2019 - iopscience.iop.org
Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …

High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

X Yan, IS Esqueda, J Ma, J Tice, H Wang - Applied Physics Letters, 2018 - pubs.aip.org
In this work, we study the high critical breakdown field in β-Ga 2 O 3 perpendicular to its
(100) crystal plane using a β-Ga 2 O 3/graphene vertical heterostructure. Measurements …

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Z Liu, PG Li, YS Zhi, XL Wang, XL Chu… - Chinese Physics …, 2019 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …