Semiconductor field effect devices (FEDs) have become ubiquitous in everyday life due to
their widespread applications. However, their stability in challenging environments such as …

The newly developed nanoscale vacuum devices have basic functions similar to traditional
vacuum tubes, but can be manufactured by existing silicon-based process lines to achieve …

Air‐channel devices have a special advantage due to the promise of vacuum‐like ballistic
transport in air, radiation insensitivity, and nanoscale size. Here, achieving high current at …

A nanoscale field emission vacuum channel gated diode structure is proposed and a
tungsten cathode with an umbrella-like geometry and sharp vertical edge is fabricated. The …

A complementary vacuum field emission device structure is proposed, and its operation is
analyzed by multiphysics simulation. A freely moving double-clamped cantilever, which …

As one of the most promising electronic devices in the post-Moore era, nanoscale vacuum
field emission transistors (VFETs) have garnered significant attention due to their unique …

A novel two-terminal vertical bridge structure nanoscale vacuum electronic device (NVED) is
proposed to optimize the device structure for improved frequency characteristics in this …

The development of semiconductor integrated technology and the transition to nanometer
resolution of the lithographic process has led to the development of semiconductor field …

Развитие полупроводниковой интегральной технологии и переход к нанометровому
разрешению литографического процесса обусловили разработку полупроводниковых …