Modification of the atomic and electronic structure of III–V semiconductor surfaces at interfaces with electrolyte solutions
MV Lebedev - Semiconductors, 2020 - Springer
Recent experimental and theoretical data on modification of the atomic and electronic
structures of the surface of different III–V semiconductors by electrolyte solutions are …
structures of the surface of different III–V semiconductors by electrolyte solutions are …
Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
HP Komsa, A Pasquarello - Journal of Physics: Condensed …, 2012 - iopscience.iop.org
The formation energies and charge transition levels of vacancy and antisite defects in GaAs
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
Модификация атомной и электронной структуры поверхности полупроводников АВ на границе с растворами электролитов. Обзор
МВ Лебедев - Физика и техника полупроводников, 2020 - mathnet.ru
Обобщены экспериментальные и теоретические результаты последних лет по
модификации атомной и электронной структуры поверхности различных …
модификации атомной и электронной структуры поверхности различных …
Passivation of interfacial defects at III-V oxide interfaces
L Lin, J Robertson - Journal of Vacuum Science & Technology B, 2012 - pubs.aip.org
The electronic structure of gap states has been calculated in order to assign the interface
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
states observed at III-V oxide interfaces. It is found that As-As dimers and Ga and As …
Low interfacial trap density and sub-nm equivalent oxide thickness in In0. 53Ga0. 47As (001) metal-oxide-semiconductor devices using molecular beam deposited …
We investigated the passivation of In 0.53 Ga 0.47 As (001) surface by molecular beam
epitaxy techniques. After growth of strained In 0.53 Ga 0.47 As on InP (001) substrate, HfO …
epitaxy techniques. After growth of strained In 0.53 Ga 0.47 As on InP (001) substrate, HfO …
Low Trap Density in InAs/High-k Nanowire Gate Stacks with Optimized Growth and Doping Conditions
In this paper, we correlate the growth of InAs nanowires with the detailed interface trap
density (D it) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric …
density (D it) profile of the vertical wrap-gated InAs/high-k nanowire semiconductor-dielectric …
Intrinsic defects in GaAs and InGaAs through hybrid functional calculations
HP Komsa, A Pasquarello - Physica B: Condensed Matter, 2012 - Elsevier
Vacancies, antisites, and dangling bonds in GaAs and In0. 5Ga0. 5As are studied through
hybrid density functionals. The As antisite is found to have a low formation energy in As-rich …
hybrid density functionals. The As antisite is found to have a low formation energy in As-rich …
GaSb molecular beam epitaxial growth on p-InP (001) and passivation with in situ deposited Al2O3 gate oxide
The integration of high carrier mobility materials into future CMOS generations is presently
being studied in order to increase drive current capability and to decrease power …
being studied in order to increase drive current capability and to decrease power …
Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study
Using density functional calculations, we study a set of candidate defects for Fermi-level
pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and …
pinning at GaAs/oxide interfaces. The set of considered defects comprises both bulklike and …
In-situ metalorganic chemical vapor deposition and capacitance-voltage characterizations of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors
The in-situ metalorganic chemical vapor deposition of Al 2 O 3 on Ga-face GaN metal-oxide-
semiconductor capacitors (MOSCAPs) is reported. Al 2 O 3 is grown using …
semiconductor capacitors (MOSCAPs) is reported. Al 2 O 3 is grown using …