GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

Since two decades piezoelectric MEMS resonator research has been making a headway by
leaps and bounds in multiple fronts such as micro/nanofabrication techniques, device and …

Wet etching of silicon carbide typically exhibits poor etching efficiency and low aspect ratio.
In this study, an etching structure that exploits anisotropic charge carrier flow to enable high …

An overview of microelectromechanical systems (MEMS) resonators for frequency reference
and timing applications is presented. The progress made in the past few decades in design …

Piezoelectric materials have attracted considerable attention over the last two decades
because many technologies utilize their core properties of piezoelectric materials. Previous …

A study of GaN for high temperature (HT, up to 500° C) digital circuits was conducted. A HT-
robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN high …

This paper reports on the high temperature (HT) robustness of enhancement-mode (E-
mode) p-GaN-gated Al-GaN/GaN high electron mobility transistors (HEMTs), with an …

In this letter, we report a highly temperature-stable and low impedance scandium doped
aluminum nitride (Sc x AI 1-x N,%) on silicon piezoelectric microelectromechanical system …

Over the past decade, ultraviolet (UV) detection has been a subject of major interest for both
research scientists and engineers because of its important applications in both the civil and …

Micromachined thin-film lead zirconate titanate (PZT) retains exceptional piezoelectric and
energy-harvesting capabilities, thus offering an excellent platform for enabling efficient …