GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Abstract Trivalent lanthanide (Ln 3+) ions doped semiconductor nanomaterials have
recently attracted considerable attention owing to their distinct optical properties and their …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …

Erbium doped Ga 2 O 3 thin films were deposited on Si substrate by pulsed laser deposition
method. Bright green emission (∼ 548 nm) can be observed by naked eye from Ga 2 O 3 …

We have investigated structural, morphological and optical properties of erbium (Er) doped
Ga 2 O 3 films with different Er contents. All the films were deposited on sapphire substrates …

We investigated the photoluminescence properties of Eu, Mg-codoped GaN grown by
organometallic vapor phase epitaxy. Some emission due to intra-4f shell transition of 5 D 0-7 …

We have succeeded in growing Eu-doped GaN (GaN: Eu) layers with high crystalline quality
by organometallic vapor phase epitaxy, and have demonstrated a low-voltage current …

We demonstrate a GaN: Eu, O-based resonant-cavity light emitting diode (RCLED)
fabricated with a n-type conductive Al0. 82In0. 18N/GaN bottom-distributed Bragg reflector …

Gallium nitride active layers co-doped in situ with magnesium and europium, GaN (Mg): Eu,
show strong red photoluminescence (PL), promising for red light emitting diode (LED) …

Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid
density-functional defect calculations. This includes the interaction between the rare-earth …