The junction temperature (T j) estimation of the insulated gate bipolar transistor (IGBT) is
important for reliable operation of the power converters in various applications. For T j …

This article presents a novel method for the dynamic measurement of–characteristic of SiC
MOSFET power modules based on the process of charging the output capacitance of the …

Potential-induced degradation (PID) of photovoltaic (PV) modules is one of the most severe
types of degradation in modern modules. PID can affect crystalline silicon PV modules, and …

Recently, p-GaN gate high-electron-mobility transistors (HEMTs) have emerged as
competitive participants for next-generation high-performance power supply applications …

Accurate online junction temperature detection of high-power insulated gate bipolar
transistor (IGBT) modules is necessary for the health management system of key equipment …

On-state voltage (v CE-ON) is a useful thermal-sensitive electronic parameter (TSEP) for
Insulated gate bipolar transistors (IGBTs). In this article, an online junction temperature …

Stability in the emission intensity of a spectral lamp is an essential factor determining the
performance of a4He optically pumped sensor (He-OPS). However, in an He-OPS, the …

In this article, a novel evaluation methodology for the reliability and lifetime of E-mode
AlGaN/GaN high electron mobility transistors (HEMTs) has been proposed. A practical …

Online health monitoring of the IGBT in power converters of electric vehicles (EVs) is
necessary to enhance the system reliability. On-state collector emitter voltage, V_CE is a …

In the design process of power electronics converters, the power semiconductors thermal
modeling is one of the most critical tasks. An accurate estimation of the junction temperature …