We have studied the relationship between the structure and the spin Hall angle of the early 5d transition metals in X/CoFeB/MgO (X= Hf, Ta, W, and Re) heterostructures. Spin Hall …
Y Zhang, Z Wang, N Li, Z Che, X Liu… - … Applied Materials & …, 2022 - ACS Publications
Manipulating the interfacial structure is vital to enhancing the interfacial thermal conductance (G) in Cu/diamond composites for promising thermal management …
D Choi, B Wang, S Chung, X Liu, A Darbal… - Journal of Vacuum …, 2011 - pubs.aip.org
Sputter-deposited W films with nominal thicknesses between 5 and 180 nm were prepared by varying the base pressure prior to film deposition and by including or not including …
Thin films of β-W are the most interesting for manipulating magnetic moments using spin– orbit torques, and a clear understanding of α to β phase transition in W by doping impurity …
We report the creation of an unusual simple cubic-phase W100 nanorods with a pyramidal tip having four 110 facets using an oblique-angle sputter deposition technique with substrate …
We report the systematic dependence of spin pumping in tungsten (W)/CoFeB heterostructures on the structural phase of W, which is intricately related to argon gas …
In this work, the deposition of tungsten (W) films by High Power Impulse Magnetron Sputtering (HiPIMS) has been investigated. By adopting a combined modeling and …
D Choi, K Barmak - Electronic Materials Letters, 2017 - Springer
The continuous scaling of copper (Cu) interconnects produced two major shortcomings–a severe resistivity size effect and material reliability issues. Tungsten (W), with the expected …
Middle-of-the-line (MOL) interconnect and contact resistances represent significant impacts to high-end IC performance at≤ 10 nm nodes. CVD W-based metallization has been used …