Recent advances in silicon carbide chemical mechanical polishing technologies
Chemical mechanical polishing (CMP) is a well-known technology that can produce
surfaces with outstanding global planarization without subsurface damage. A good CMP …
surfaces with outstanding global planarization without subsurface damage. A good CMP …
[HTML][HTML] MD simulation of chemically enhanced polishing of 6H-SiC in aqueous H2O2
Chemical enhanced polishing (CEP) is a widely employed final process for achieving
precise surface shaping and planarization of semiconductor wafers. However, determining …
precise surface shaping and planarization of semiconductor wafers. However, determining …
Molecular Dynamics Simulation of Single-Crystal 4H-SiC Nano Scratching with Different Scratching Directions of the Tool
L Liang, S Li, P Chai, K Lan, R Yu - Crystals, 2023 - mdpi.com
4H-SiC (silicon carbide) is widely used in semiconductor devices due to its superior
characteristics. However, processing techniques such as cutting, grinding, and polishing …
characteristics. However, processing techniques such as cutting, grinding, and polishing …
Understanding the role of surface mechanical properties in SiC surface machining
Y Huang, Y Zhou, J Li, F Zhu - Materials Science in Semiconductor …, 2023 - Elsevier
Surface modification layers play a crucial role in enhancing machinability during reaction-
assisted machining due to the interrelated behavior of the surface and interface resulting …
assisted machining due to the interrelated behavior of the surface and interface resulting …
Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics
X Ban, S Zheng, Z Tian, J Zhu, W Ba, N Wang… - Tribology …, 2024 - Elsevier
Single-crystal silicon carbide (SiC) substrates with ultra-smooth and low-damage
characteristics are at the core of high-power chip manufacturing. However, their high …
characteristics are at the core of high-power chip manufacturing. However, their high …
Ab Initio Molecular Dynamics Approach for Oxidation of SiC Surface in Contact with Aqueous H2O2 Solutions
T Morishita, M Kayanuma, T Kato - The Journal of Physical …, 2024 - ACS Publications
Controlling the oxidation of silicon carbide (SiC) is a key factor in fabricating SiC-based
devices, such as power-integrated circuits and thermal protection systems. Oxidation is …
devices, such as power-integrated circuits and thermal protection systems. Oxidation is …
Effects of oxidizer concentration and abrasive type on interfacial bonding and material removal in 4H-SiC polishing processes
Y Zhou, K Xu, Y Gao, Z Yu, F Zhu - Physical Chemistry Chemical …, 2024 - pubs.rsc.org
Determination of chemical effects involved in material removal during the polishing process
of 4H-SiC has been a challenge. In this study, the polishing processes of 4H-SiC under the …
of 4H-SiC has been a challenge. In this study, the polishing processes of 4H-SiC under the …