Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

FinFET is the backbone device technology for CMOS electronics at deeply scaled
technology nodes per Moore's law. Recently, the FinFET concept has been leveraged to …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical
vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD …

We demonstrate record performance in a novel normally-off GaN vertical transistor with
submicron finshaped channels. This vertical fin transistor only needs n-GaN layers, with no …

This letter reports high performance GaN pn junctions with regrown p-GaN by metalorganic
chemical vapor deposition (MOCVD) on dry-etched surfaces. The breakdown voltage …

The technological development of GaN high electron mobility transistor (HEMT) is on the
right track to compete with Si and SiC-based power transistors for the market segment of> …